(China (Mainland))
Product Summary
The RA60H1317 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range. The output power and drain current of the RA60H1317 increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power of the RA60H1317 becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. The RA60H1317 module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
Parametrics
RA60H1317 maximum ratings: (1)VDD, Drain Voltage, VGG<5V: 17 V; (2)VGG, Gate Voltage VDD<12.5V, Pin=0mW: 6 V; (3)Pin, Input Power: 100 mW; (4)Pout, Output Power: 75 W; (5)Tcase(OP), Operation Case Temperature Range, f=135-175MHz, ZG=ZL=50Ω: -30 to +110 ℃; (6)Tstg, Storage Temperature Range: -40 to +110 ℃.
Features
RA60H1317 features: (1)Enhancement-Mode MOSFET Transistors (IDD=0 @ VDD=12.5V, VGG=0V); (2)Pout>60W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW; (3)Broadband Frequency Range: 135-175MHz; (4)Low-Power Control Current IGG=1mA (typ) at VGG=5V; (5)Module Size: 66 x 21 x 9.88 mm; (6)Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power.
Diagrams
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Pricing (USD) |
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 RA60H1317M |
Other |
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Data Sheet |
Negotiable |
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RA60H1317M1A |
Other |
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Data Sheet |
Negotiable |
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