Product Summary

The NJM4558DD is a dual high-gain operational amplifier internally compensated and constructed on a single silicon chip using an advanced epitaxial process. Combining the features of the NJM741 with the close parameter matching and tracking of a dual device on a monolithic chip results in unique performance characteristics. Excellent channel separation allow the use of the dual device in single NJM741 operational amplifier applications providing density. The NJM4558DD is especially well suited for applications in differential-in, defferential-out as well as in potentiometric amplifiers NJM4558DD and where gain and phase matched channels are mandatory.

Parametrics

NJM4558DD absolute maximum ratings: (1)Supply Voltage, V+/V-: ± 18 V ; (2)Differential Input Voltage, VID: ± 30 V ; (3)Input Voltage, VIC: ± 15 ( note ) V ; (4)Power Dissipation, VIC: ( DIP8 ) 500 ( DMP8 ) 300( SSOP8 ) 250 ( SIP8 ) 800 mW ; (5)Operating Temperature Range, Topr: -40~+85 ℃; (6)Storage Temperature Range, Tstg: -40~+125 ℃.

Features

NJM4558DD features: (1)Operating Voltage ( ±4V~±18V ); (2)High Voltage Gain ( 100dB typ. ); (3)High Input Resistance ( 5MΩ typ. ); (4)Package Outline DIP8,DMP8,SIP8,SSOP8; (5)Bipolar Technology.

Diagrams

NJM4558DD circuit diagram

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