(China (Mainland))
Product Summary
The SSD2002TF is a Dual N-channel power MOSFET.
Parametrics
SSD2002TF absolute maximum rating: (1)Drain-to-Source Voltage, VDSS: 50 V; (2)Drain-Gate Voltage(RGS=1.0MΩ), VDGR: 50V; (3)Gate-to-Source Voltage, VGS: ±20V; (4)Continuous Drain Current TA=25℃, ID: 2.0A; (5)Continuous Drain Current TA=100℃, ID: 1.6A; (6)Drain Current-Pulsed, IDM: 8.0V; (7)Total Power Dissipation TA=25℃, PD: 2.0W; TA=70℃, PD:1.3W ; (8)Operating and Storage, TJ , Junction Temperature Range, TSTG: -55 to +150℃; (9)Maximum Lead Temp. for Soldering Purposes, 1/16” from case for 5 seconds, TL: 300℃.
Features
SSD2002TF features: (1)Extremely Lower RDS(ON); (2)Improved Inductive Ruggedness; (3)Fast Switching Times; (4)Rugged Polysilicon Gate Cell Structure; (5)Low Input Capacitance; (6)Extended Safe Operating Area; (7)Improved High Temperature Reliability; (8)Surface Mounding Package: 8SOP.
Diagrams
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 SSD2 |
Cooper Bussmann |
Fuses 2A 240VAC IND |
Data Sheet |
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SSD20 |
Cooper Bussmann |
Fuses 20A 240VAC IND |
Data Sheet |
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SSD2002ASTF |
Fairchild Semiconductor |
MOSFET SOIC-8 |
Data Sheet |
Negotiable |
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SSD2002ATF |
Fairchild Semiconductor |
MOSFET SOIC-8 |
Data Sheet |
Negotiable |
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SSD2003ATF |
Fairchild Semiconductor |
MOSFET SOIC-8 |
Data Sheet |
Negotiable |
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SSD2004ATF |
Fairchild Semiconductor |
MOSFET SOIC-8 |
Data Sheet |
Negotiable |
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