(China (Mainland))
Product Summary
The NTMFS4833NT1G is a Power MOSFET. The applications of it are CPU Power Delivery, DC-DC Converters, Low Side Switching.
Parametrics
NTMFS4833NT1G absolute maximum ratings: (1)Drain to Source Voltage:30 V; (2)Gate to Source Voltage:±20 V; (3)Power dissipation:2.35W; (4)operating junction and storage temperature:-55 to 150℃; (5)source current:104A; (6)drain to source dv/dt:612.5mJ; (7)lead temperature for soldering purposes:260℃.
Features
NTMFS4833NT1G features: (1)Low RDS(on) to Minimize Conduction Losses; (2)Low Capacitance to Minimize Driver Losses; (3)Optimized Gate Charge to Minimize Switching Losses; (4)These are Pb-Free Devices.
Diagrams
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 NTMFS4833NT1G |
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Data Sheet |
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