(China (Mainland))
Product Summary
The MRF150 is a RF power field effect transistor of N–channel enhancement mode.
Parametrics
Absolute maximum ratings: (1)Drain–Source Voltage, VDSS: 125 Vdc; (2)Drain–Gate Voltage, VDGO: 125 Vdc; (3)Gate–Source Voltage, VGS: ±40 Vdc; (4)Drain Current — Continuous, ID: 16 Adc; (5)Total Device Dissipation at TC = 25℃, Derate above 25℃, PD: 300Watts; (6)Total Device Dissipation, Derate above 25℃, PD: 1.71W/℃; (7)Storage Temperature Range, Tstg: –65 to +150℃; (8)Operating Junction Temperature, TJ: 200℃.
Features
Features: (1)Specified 50 Volts, 30 MHz Characteristics; (2)Output Power = 150 Watts; (3)Power Gain = 17 dB (Typ); (4)Efficiency = 45% (Typ); (5)Superior High Order IMD; (6)IMD(d3) (150 W PEP) — –32 dB (Typ); (7)IMD(d11) (150 W PEP) — –60 dB (Typ); (8)100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 MRF150 |
M/A-COM Technology Solutions |
Transistors RF MOSFET Power 5-150MHz 150Watts 50Volt Gain 17dB |
Data Sheet |
|
|
||||||||||||
 |
MRF1500 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
MRF15030 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
MRF15060 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
MRF15060S |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
MRF1507 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
MRF1507T1 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
MRF15090 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
