Product Summary

The IRF730PBF is a HEXFET Power MOSFET. Third generation HEXFETs from international rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effctiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Parametrics

IRF730PBF absolute maximum ratings: (1)Continuous drain current, VGS @ 10V, ID @ TC= 25℃: 5.5A; (2)Continuous drain current, VGS @ 10V, ID @ TC= 100℃: 3.5A; (3)pulsed drain current, IDM: 22A; (4)power dissipation, PD @ TC= 25℃: 74W; (5)linear derating factor: 0.59W/℃; (6)gate-to -source voltage, VGS: ±20V; (7)single pulse avalanche energy, EAS: 290mJ; (8)avalanche current, IAR: 5.5A; (9)repetitive avalanche energy, EAR: 7.4mJ; (10)peak diode recovery dv/dt, dv/dt: 4.0V/ns; (11)operating junction and storage temperature range, TJ,TSTG: -55 TO +150℃.

Features

IRF730PBF features: (1)Dynamic dv/dt rating; (2)repetitive avalanche rated ; (3)fast switching ; (4)ease of paralleling ; (5)simple drive requirements; (6)lead-free.

Diagrams

IRF730PBF circuit dragram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRF730PBF
IRF730PBF

Vishay/Siliconix

MOSFET N-Chan 400V 5.5 Amp

Data Sheet

0-1: $0.76
1-10: $0.60
10-100: $0.52
100-250: $0.46
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRF710
IRF710

Vishay/Siliconix

MOSFET N-Chan 400V 2.0 Amp

Data Sheet

0-730: $0.79
730-1000: $0.76
1000-2000: $0.74
2000-5000: $0.73
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Data Sheet

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Data Sheet

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0-1: $0.68
1-25: $0.40
25-100: $0.24
100-250: $0.23
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Data Sheet

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