Product Summary
The CNZ2253/ON2253 is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity Si Darlington phototransistor is used as the light detecting element. The two elements are located parallel in the same direction and objects are detected when passing in front of the device.
Parametrics
CNZ2253/ON2253 absolute maximum ratings: (1)Input (Light emitting diode), Reverse voltage (DC), VR: 3V; Forward current (DC), IF: 50 mA; Power dissipation, PD: 75 mW; (2)output (photo transistor), Collector to emitter voltage (base open), VCEO: 20 V; emitter-collector voltage (base open), VECO: 5V; Collector current, IC: 30 mA; Collector power dissipation, P : 100 mW; (3)Operating ambient temperature, Topr:–25 to +85℃; (4)Storage temperature, Tstg:–30 to +100℃.
Features
CNZ2253/ON2253 features: (1)High sensitivity; (2)Small size and light weight.
Diagrams
CNZ2153 |
SENSR OPTO TRANS 3MM REFL TH PCB |
Data Sheet |
Negotiable |
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CNZ2179 |
Other |
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Negotiable |
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CNZ2253 |
Other |
Data Sheet |
Negotiable |
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CNZ2A4LTE |
KOA Speer |
Resistor Networks & Arrays ZEROohms CONCAVE SQ |
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CNZ2B4ALTE |
KOA Speer |
Resistor Networks & Arrays ZERO OHM CONVEX SCALLOPED |
Data Sheet |
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CNZ2B4ATTE |
KOA Speer |
Resistor Networks & Arrays ZERO OHM CONVEX SCALLOPED |
Data Sheet |
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