Product Summary
The BLF571 a 20 W LDMOS RF transistor. The applications of it are Industrial, scientific and medical applications, Broadcast transmitter applications.
Parametrics
BLF571 absolute maximum ratings: (1)drain-source voltage:110V; (2)gate-source voltage:-0.5 to +11V; (3)drain current:3.6A; (4)storage temperature:-65 to +150℃; (5)junction temperature:225℃.
Features
BLF571 features: (1)Easy power control; (2)Integrated ESD protection; (3)Excellent ruggedness; (4)High efficiency; (5)Excellent thermal stability; (6)Designed for broadband operation (10 MHz to 500 MHz); (7)Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances(RoHS).
Diagrams
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![]() BLF571,112 |
![]() NXP Semiconductors |
![]() Transistors RF MOSFET Power Trans MOSFET N-CH 110V 3.6A 3-Pin |
![]() Data Sheet |
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Image | Part No | Mfg | Description | ![]() |
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![]() BLF542,112 |
![]() NXP Semiconductors |
![]() Transistors RF MOSFET Power RF DMOS 5W UHF |
![]() Data Sheet |
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![]() BLF544 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() BLF544,112 |
![]() NXP Semiconductors |
![]() Transistors RF MOSFET Power RF DMOS 20W UHF |
![]() Data Sheet |
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![]() BLF544B |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() BLF546 |
![]() NXP Semiconductors |
![]() Transistors RF MOSFET Power BULK TNS-RFPR |
![]() Data Sheet |
![]() Negotiable |
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![]() BLF546,112 |
![]() NXP Semiconductors |
![]() Transistors RF MOSFET Power BULK TNS-RFPR |
![]() Data Sheet |
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